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Silicon Carbide in Semiconductor Manufacturing

08-November-2024

Silicon carbide ceramics have become a key material in semiconductor manufacturing due to their excellent properties, such as high density, high thermal conductivity, high bending strength, high elastic modulus, strong corrosion resistance, and high temperature resistance. It is not easy to produce bending stress deformation and thermal strain, and can adapt to the harsh reaction environment of strong corrosion and ultra-high temperature in the manufacturing process such as wafer epitaxy and etching. Therefore, silicon carbide ceramics have been widely used in semiconductor processes such as grinding and polishing, epitaxy/oxidation/diffusion and other heat treatments, photolithography, deposition, etching, and ion implantation.

In the grinding process of wafers, the use of silicon carbide grinding discs is crucial. The sharp edges and defects formed after wafer cutting need to be trimmed through the grinding process to reduce the thickness of the wafer, improve the parallelism of the silicon wafer surface, and eliminate the surface damage caused by the wire cutting process. Silicon carbide grinding discs show outstanding advantages in high-speed grinding and polishing due to their high hardness, low wear, and basically the same thermal expansion coefficient as silicon wafers.
Tànhuà guī táocí: Bàndǎotǐ zhìchéng zhōng bùkě huò quē de jīngmì líng bùjiàn cáiliào zài zhōngguó diànzǐ xìnxī chǎnyè fāzhǎn yán jiù yuàn de zhīchí xià, guójiā xīn cáiliào chǎnyè zīyuán gòngxiǎng píngtái wèi guǎngdà hángyè tóngrén tígōngle fēngfù de hángyè zīxùn hé zīyuán gòngxiǎng fúwù. Jīntiān, wǒmen jùjiāo yú yī zhǒng zài bàndǎotǐ zhìchéng zhōng bànyǎnzhe yuè lái yuè zhòngyào juésè de cáiliào——tànhuà guī (SiC) táocí. Tànhuà guī táocí yǐ qí zhuóyuè dì xìngnéng, rú gāo mìdù, gāorè dǎo lǜ, dà wānqū qiángdù, gāo tánxìng mó shù, qiáng kàng fǔshí xìng, nài gāowēn děng tèxìng, chéngwéile bàndǎotǐ zhìchéng zhōng de guānjiàn cáiliào. Tā bùyì chǎnshēng wānqū yìnglì biànxíng hé rè yìngbiàn, nénggòu shìyìng jīng yuán wàiyán, kè shí děng zhìzào huánjié de qiáng fǔshí xìng hé chāo gāowēn de èliè fǎnyìng huánjìng. Yīncǐ, tànhuà guī táocí zài yánmó pāoguāng, wàiyán/yǎnghuà/kuòsàn děng rèchǔlǐ, guāng kē, chénjī, kè shí, lízǐ zhùrù děng bàndǎotǐ zhìchéng zhōng dédàole guǎngfàn yìngyòng. Zài jīng yuán de yánmó guòchéng zhōng, tànhuà guī yán mò pán de shǐyòng zhì guān zhòngyào. Jīng yuán qiēgē hòu xíngchéng de ruìlì biānyuán hé quēxiàn xūyào tōngguò yánmó gōngxù xiūzhěng, yǐ jiàngdī jīngpiàn hòudù, tígāo guī piàn biǎomiàn de píngxíng dù, bìng xiāochú xiàn qiēgē gōngxù dǎozhì de biǎomiàn sǔnshāng. Tànhuà guī yán mò pán yīn qí gāo yìngdù, xiǎo mósǔn yǐjí yǔ guī jīngpiàn jīběn xiàng tóng de rèpéngzhàng xìshù, zài gāosù yánmó pāoguāng guòchéng zhōng xiǎnshì chū túchū yōushì. Zài jīng yuán zhìzào guòchéng zhōng, yǎnghuà, kuòsàn, tuìhuǒ, héjīn děng rèchǔlǐ gōngyì tóngyàng lì bù kāi tànhuà guī táocí chǎnpǐn. Zhèxiē chǎnpǐn bāokuò yòng yú bānyùn jīng yuán de tànhuà guī táocí bì hé rèchǔlǐ shèbèi fǎnyìng qiāng nèi de líng bùjiàn. Zài guī jīngpiàn shēngchǎn shí, gāowēn rèchǔlǐ guòchéng zhōngcháng shǐyòng jīxiè bì bānsòng, yùnshū yǐjí dìngwèi bàndǎotǐ jīng yuán. Zài guāng kē jī de yìngyòng zhōng, tànhuà guī táocí tóngyàng zhòngyào, tā bèi yòng yú gōngjiàn tái, táocí fāng jìng héguāng zhào bómó. Guāng kē jī gōngjiàn tái fùzé chéngzài jīng yuán bìng wánchéng pùguāng yùndòng, ér táocí fāng jìng zé shì gōngjiàn tái sǎomiáo dìngwèi fǎnkuì cèliáng xìtǒng de zhòngyào zǔchéng bùfèn. Guāng zhào bómó zé yòng yú bǎohù guāng zhào miǎn shòu EUV guāng zhàoshè chǎnshēng de rèliàng sǔnhài. Cǐwài, kè shí shèbèi zhōng de CVD tànhuà guī líng bùjiàn bāokuò jùjiāo huán, qìtǐ pēn lín tóu, tuōpán, biānyuán huán děng, ér chénjī shèbèi zhōng zé yǒu shì gài, qiāng nèi chèn,SiC tú céng shímò jī zuò děng. 展开 724 / 5,000 Silicon carbide ceramics: an indispensable precision component material in semiconductor manufacturing
In the wafer manufacturing process, heat treatment processes such as oxidation, diffusion, annealing, and alloying are also inseparable from silicon carbide ceramic products. These products include silicon carbide ceramic arms for handling wafers and components in the reaction chamber of heat treatment equipment. In the production of silicon wafers, robotic arms are often used to transport, transport, and position semiconductor wafers during high-temperature heat treatment.
Tànhuà guī táocí: Bàndǎotǐ zhìchéng zhōng bùkě huò quē de jīngmì líng bùjiàn cáiliào zài zhōngguó diànzǐ xìnxī chǎnyè fāzhǎn yán jiù yuàn de zhīchí xià, guójiā xīn cáiliào chǎnyè zīyuán gòngxiǎng píngtái wèi guǎngdà hángyè tóngrén tígōngle fēngfù de hángyè zīxùn hé zīyuán gòngxiǎng fúwù. Jīntiān, wǒmen jùjiāo yú yī zhǒng zài bàndǎotǐ zhìchéng zhōng bànyǎnzhe yuè lái yuè zhòngyào juésè de cáiliào——tànhuà guī (SiC) táocí. Tànhuà guī táocí yǐ qí zhuóyuè dì xìngnéng, rú gāo mìdù, gāorè dǎo lǜ, dà wānqū qiángdù, gāo tánxìng mó shù, qiáng kàng fǔshí xìng, nài gāowēn děng tèxìng, chéngwéile bàndǎotǐ zhìchéng zhōng de guānjiàn cáiliào. Tā bùyì chǎnshēng wānqū yìnglì biànxíng hé rè yìngbiàn, nénggòu shìyìng jīng yuán wàiyán, kè shí děng zhìzào huánjié de qiáng fǔshí xìng hé chāo gāowēn de èliè fǎnyìng huánjìng. Yīncǐ, tànhuà guī táocí zài yánmó pāoguāng, wàiyán/yǎnghuà/kuòsàn děng rèchǔlǐ, guāng kē, chénjī, kè shí, lízǐ zhùrù děng bàndǎotǐ zhìchéng zhōng dédàole guǎngfàn yìngyòng. Zài jīng yuán de yánmó guòchéng zhōng, tànhuà guī yán mò pán de shǐyòng zhì guān zhòngyào. Jīng yuán qiēgē hòu xíngchéng de ruìlì biānyuán hé quēxiàn xūyào tōngguò yánmó gōngxù xiūzhěng, yǐ jiàngdī jīngpiàn hòudù, tígāo guī piàn biǎomiàn de píngxíng dù, bìng xiāochú xiàn qiēgē gōngxù dǎozhì de biǎomiàn sǔnshāng. Tànhuà guī yán mò pán yīn qí gāo yìngdù, xiǎo mósǔn yǐjí yǔ guī jīngpiàn jīběn xiàng tóng de rèpéngzhàng xìshù, zài gāosù yánmó pāoguāng guòchéng zhōng xiǎnshì chū túchū yōushì. Zài jīng yuán zhìzào guòchéng zhōng, yǎnghuà, kuòsàn, tuìhuǒ, héjīn děng rèchǔlǐ gōngyì tóngyàng lì bù kāi tànhuà guī táocí chǎnpǐn. Zhèxiē chǎnpǐn bāokuò yòng yú bānyùn jīng yuán de tànhuà guī táocí bì hé rèchǔlǐ shèbèi fǎnyìng qiāng nèi de líng bùjiàn. Zài guī jīngpiàn shēngchǎn shí, gāowēn rèchǔlǐ guòchéng zhōngcháng shǐyòng jīxiè bì bānsòng, yùnshū yǐjí dìngwèi bàndǎotǐ jīng yuán. Zài guāng kē jī de yìngyòng zhōng, tànhuà guī táocí tóngyàng zhòngyào, tā bèi yòng yú gōngjiàn tái, táocí fāng jìng héguāng zhào bómó. Guāng kē jī gōngjiàn tái fùzé chéngzài jīng yuán bìng wánchéng pùguāng yùndòng, ér táocí fāng jìng zé shì gōngjiàn tái sǎomiáo dìngwèi fǎnkuì cèliáng xìtǒng de zhòngyào zǔchéng bùfèn. Guāng zhào bómó zé yòng yú bǎohù guāng zhào miǎn shòu EUV guāng zhàoshè chǎnshēng de rèliàng sǔnhài. Cǐwài, kè shí shèbèi zhōng de CVD tànhuà guī líng bùjiàn bāokuò jùjiāo huán, qìtǐ pēn lín tóu, tuōpán, biānyuán huán děng, ér chénjī shèbèi zhōng zé yǒu shì gài, qiāng nèi chèn,SiC tú céng shímò jī zuò děng. 展开 724 / 5,000 Silicon carbide ceramics: an indispensable precision component material in semiconductor manufacturing
In the application of photolithography machines, silicon carbide ceramics are also important. They are used for worktables, ceramic square mirrors, and mask films. The worktable of the photolithography machine is responsible for carrying the wafer and completing the exposure movement, while the ceramic square mirror is an important part of the worktable scanning positioning feedback measurement system. The mask film is used to protect the mask from heat damage generated by EUV light irradiation.

In addition, CVD silicon carbide components in etching equipment include focus rings, gas shower heads, trays, edge rings, etc., while deposition equipment includes chamber covers, cavity liners, SiC-coated graphite bases, etc.
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