Boron nitride can be used to prepare semiconductor components. It was the first time that the Institute of Inorganic Materials of the Japan Science and Technology Agency used the latest technological achievements of growing large single crystal cubic boron nitride (c-BN) to successfully manufacture the world's first energy A p-n junction diode that works stably at a temperature of 650°C. Previously, silicon semiconductors were widely used as electronic device materials, but they failed at temperatures above 200°C. So trying to study a new type of high temperature semiconductor material that can be used in extremely high temperature environment, such as outer space and nuclear reactor. In this regard, materials with stiffness and fusibility equal to diamond are worthy of consideration. The basic material of diamond is graphite, which has good thermal conductivity. At the same time, boron nitride, which has the same properties as graphite, is included in the field of vision of researchers. After a series of research and development, the final product is a high-temperature semiconductor p-n junction device made of boron nitride material. It can still work normally at 650 ° C, which is 3 times higher than the current widely used silicon device in terms of operating temperature. Many. It is conceivable that this material will bring broad prospects to the semiconductor industry and is a major breakthrough. This will also promote the development of new materials such as hexagonal boron nitride derived from boron nitride and more uses.