Silicon carbide (SiC) is a semiconductor material with highly suitable properties for high-power, high-frequency, and high-temperature applications.   Silicon carbide is a wide bandgap semiconductor material with high breakdown electric field strength, high saturated drift velocity of electrons, and a high thermal conductivity. In addition, SiC, like silicon (Si), has SiO2 as its stable, native oxide. This fact is often overlooked but is key to any semiconductor technology, both from a processing perspective as well as opening up metal-oxide-semiconductor (MOS) device opportunities for SiC. Therefore, these properties make SiC ideally suited for a vast number of applications.